Ib. Lub hauv paus ntsiab lus tseem ceeb: Qhov Sib txawv tseem ceeb ntawm plaub lub thev naus laus zis
Qhov sib txawv tseem ceeb hauv lub cev kev tso tawm thev naus laus zis yog los ntawm cov txheej txheem sib txawv ntawm lub cev ntawm "ua rau lub hom phiaj atoms / ions kom tshem tawm ntawm niam txiv cov khoom los tsim cov roj theem". Cov txheej txheem tseem ceeb no ncaj qha txiav txim siab cov yeeb yaj kiab tsim cov yam ntxwv ntawm cov yeeb yaj kiab tom ntej nyias.
1. Evaporation deposition: Cov txheej txheem tseem ceeb yog thermal evaporation. Lub cua sov qhov chaw (kuj, electron beam, induction cua sov, thiab lwm yam) imparts kinetic zog rau lub atoms ntawm lub hom phiaj cov ntaub ntawv, ua rau lawv kov yeej interatomic rog thiab khiav mus tsim gaseous atoms. Cov gaseous atoms tsiv mus rau substrate nto nyob rau hauv ib qho chaw nqus tsev vacuum thiab loj hlob mus rau hauv ib zaj duab xis los ntawm adsorption, diffusion, thiab nucleation. Lub zog ntawm gaseous atoms yog tsawg (0.1-1 eV), thiab cov txheej txheem khiav yog maj mam.
2. Sputter deposition: Cov thev naus laus zis tseem ceeb cuam tshuam nrog kev hloov pauv ntawm lub zog siab ntawm - zog particle bombardment. Nyob rau hauv ib puag ncig lub tshuab nqus tsev, siab -zog ions (xws li Ar⁺) tau nrawm los ntawm qhov chaw hluav taws xob thiab foob pob rau cov khoom siv ntawm kev kub ceev. Los ntawm lub zog hloov mus, lub hom phiaj atoms tshem tawm ntawm niam txiv cov ntaub ntawv los tsim cov atoms sputtered (lub zog 1-10 eV), uas ces tsiv thiab tso rau hauv zaj duab xis. Piv nrog rau evaporation, lub atom khiav tawm yog tam sim ntawd, ua rau kom zoo dua zaj duab xis adhesion.
3. Multi-arc ion plating: Cov thev naus laus zis thev naus laus zis yog tsim los ntawm lub siab - zog ion tam sim no los ntawm lub tshuab nqus tsev arc tawm. Lub siab -voltage breakdown gas yog siv ntawm lub hom phiaj cov khoom (cathode) thiab lub tshuab nqus tsev chamber (anode) los ua ib qho arc tawm. Lub zog siab heev ntawm qhov chaw arc (10⁵{13}}10⁷ W / cm²) ua rau cov khoom siv hauv zos yaj, evaporate, thiab ionize (ionization tus nqi ntawm 60% -90%, deb tshaj li 5% -10% ntawm sputtering). Lub zog ions (10-100 eV) tau muab tso rau hauv cov yeeb yaj kiab raws li kev taw qhia ntawm hluav taws xob.
4. Ion Beam Deposition: Cov thev naus laus zis tseem ceeb yog kev taw qhia siab -zog ion beam direct deposition. Lub hom phiaj atoms lossis roj molecules yog ionized thiab nrawm siv cov khoom siv ion (Kaufman, ECR, thiab lwm yam) los tsim ib txoj kab hluav taws xob ion nrog kev tswj tau lub zog thiab cov nqaj ceev. Cov nqaj no ncaj qha mus rau hauv lub substrate nto, neutralizes nws, thiab tsim ib zaj duab xis, ua tiav cov deposition meej.
Ob. Cov thev naus laus zis tseem ceeb: Cov cuab yeej siv architecture thiab qhov tseem ceeb tswj tsis tau
Qhov sib txawv ntawm cov hauv paus ntsiab lus ncaj qha ua rau muaj qhov sib txawv tseem ceeb hauv cov cuab yeej siv cuab yeej cuab tam, cov khoom tseem ceeb, thiab cov kev tswj xyuas tseem ceeb ntawm plaub lub thev naus laus zis. Cov yam ntxwv ntawm cov txheej txheem no txiav txim siab lawv cov txheej txheem hloov tau yooj yim thiab daim ntawv thov scenario adaptability.
1. The core focus is on the heating source and vacuum control. The equipment consists of a vacuum chamber, heating source, crucible, substrate holder, and vacuum system. Resistance heating is low-cost but has limited temperature (≤1500℃), suitable for low-melting-point targets; electron beam heating has high temperature (>2000℃), haum rau siab - melting - taw tes lub hom phiaj, thiab yog siv dav tshaj plaws; induction cua sov ua kom muaj kuab paug tsawg dua tab sis kim dua. Cov yam ntxwv tseem ceeb: lub tshuab nqus tsev (10⁻³-10⁻⁵ Pa), lub zog cua sov, qhov kub thiab txias, thiab lub sijhawm evaporation.
2. Sputter deposition: Cov tub ntxhais nyob hauv "plasma tiam thiab hluav taws xob acceleration".
Cov khoom tseem ceeb yog plasma tiam thiab hluav taws xob acceleration. Cov cuab yeej muaj xws li lub tshuab nqus tsev vacuum, lub hom phiaj cov khoom siv, lub substrate yas dhos, roj introduction system, plasma tiam ntaus ntawv, thiab lub hwj chim mov system. Mainstream hom muaj xws li DC sputtering (tsim nyog rau lub hom phiaj conductive), RF sputtering (tsim rau insulating lub hom phiaj), thiab magnetron sputtering (magnetically confined plasma, txhim kho efficiency thiab txo kev puas tsuaj, feem ntau lug siv). Cov yam ntxwv tseem ceeb: lub tshuab nqus tsev (10⁻¹-10⁻³ Pa), lub zog hluav taws xob hluav taws xob, lub zog hluav taws xob / qhov hluav taws xob, qhov deb ntawm lub hom phiaj substrate, thiab substrate bias voltage.
3. Multi-arc ion plating: Cov tub ntxhais nyob hauv "arc tawm tswj thiab ion taw qhia".
Cov cuab yeej muaj xws li lub tshuab nqus tsev vacuum, ntau -arc cathode phiaj, arc fais fab mov, thiab substrate bias fais fab mov. Qhov kev sib tw tseem ceeb yog qhov ruaj khov arc qhov chaw tswj (kev coj los ntawm kev sib nqus kaw kom kuaj xyuas qhov chaw arc uniformly, txhim kho lub hom phiaj siv ntau dua 60%). Reactive txheej yuav tsum muaj kev tswj xyuas meej ntawm cov pa roj reactive flow rate. Cov tsis tseem ceeb suav nrog: arc tam sim no / voltage, substrate bias voltage (-50 ~ -500 V), reactive gas siab, thiab lub hom phiaj-substrate nrug.
4. Ion beam deposition: Cov tub ntxhais nyob rau hauv "ion qhov chaw thiab beam tam sim no tswj".
Cov cuab yeej muaj xws li lub tshuab nqus tsev vacuum, ion qhov chaw, beam focusing system, thiab ultra-high vacuum system (10⁻⁵-10⁷ Pa). Kaufman ion qhov chaw tsim nyog rau loj - cheeb tsam deposition, thaum ECR ion qhov chaw tuaj yeem tsim cov purity ion beams. Qee chav muaj xws li substrate pretreatment system. Cov tsis tseem ceeb muaj xws li: ion beam zog, beam tam sim no ceev, tsom ntau yam, nqus tsev vacuum, thiab substrate kub.
Peb. Zuag qhia tag nrho: Kev Zoo Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Lij Tshaj Tshaj Tag Nrho: Cov txiaj ntsig thev naus laus zis zoo tshaj plaws thiab cov txheej txheem kev thov
Qhov zoo thiab daim ntawv thov scenarios ntawm plaub lub cev deposition technologies ncaj qha cuam tshuam lawv cov hauv paus ntsiab lus thiab cov yam ntxwv tseem ceeb. Cov thev naus laus zis sib txawv muaj qhov sib txawv hauv cov ntsiab lus ntawm cov yeeb yaj kiab zoo, kev ua haujlwm ntawm kev tso nyiaj, thiab kev tswj hwm tus nqi, thiab tau yoog raws li kev xav tau ntawm kev lag luam sib txawv.
1. Evaporation Deposition: Tsawg-Nqi, Siab-Purity Basic Coating Option
Qhov zoo muaj xws li cov cuab yeej siv yooj yim, tus nqi qis, kev ua haujlwm yooj yim, cov yeeb yaj kiab siab purity, thiab ceev deposition npaum li cas (0.1-10 μm / min). Cov ntawv thov muaj xws li cov yeeb yaj kiab kho qhov muag (tiv thaiv- cov xim pleev xim rau cov tsom iav), cov yeeb yaj kiab hlau zoo nkauj (txhuas plating ntawm cov yas), semiconductor hlau electrodes, thiab cov khoom ntim khoom. Cov kev txwv muaj xws li tsis muaj zog zaj duab xis adhesion thiab tsawg ntom, ua rau nws tsis haum rau txheej multi-cov khoom alloys thiab siab -melting-point hom phiaj.
2. Sputter deposition: Lub tshuab tseem ceeb nrog kev sib luag thiab kev sib raug zoo dav
Qhov zoo muaj xws li cov yeeb yaj kiab siab ceev thiab muaj zog adhesion; compatibility nrog yuav luag tag nrho cov ntaub ntawv (hlau, ceramics, insulating cov ntaub ntawv, thiab lwm yam); multi-lub hom phiaj co-sputtering tau precisely npaj alloy films; thiab magnetron sputtering ua tiav qhov sib npaug ntawm qhov zoo thiab ua haujlwm siab. Cov ntawv thov xws li: metallization thiab dielectric txheej rau semiconductor chips, tawv txheej rau cov cuab yeej txiav, photovoltaic pob tshab conductive films (ITO), thiab cov ntaub ntawv sib nqus. Cov kev txwv muaj xws li: cov cuab yeej siv nyiaj ntau dua li evaporation, qis qis qis qis dua, thiab cov yeeb yaj kiab purity cuam tshuam los ntawm cov pa roj.
3. Multi-arc ion plating: qhov kev xaiv zoo dua rau hnav- cov coatings resistant nrog adhesion siab thiab siab hardness.
Qhov zoo muaj xws li zaj duab xis adhesion muaj zog heev, siab ceev, siab hardness, thiab zoo heev hnav tsis kam. Nws tuaj yeem ua tiav ntau-cov ntsiab lus co-deposition thiab reactive txheej, nrog tus nqi xa tawm sai (0.5-5 μm / min). Cov ntawv thov muaj xws li: cov cuab yeej thiab pwm txheej (TiAlN txheej), hnav- tiv taus thiab corrosion- tiv thaiv txheej rau cov khoom siv hauv aerospace, thiab txheej tawv tawv rau cov khoom siv tshuab. Cov kev txwv muaj xws li: qhov siab ntawm zaj duab xis nto roughness (lub hom phiaj droplet embedding), cov cuab yeej siv siab, thiab tsis tsim nyog rau cov cua kub-sensitive substrates.
4. Ion beam deposition: siab -precision, zoo heev tswj precision txheej tshuab
Cov txiaj ntsig muaj xws li cov txheej txheem tswj tau siab heev, ua rau nanometer- theem tuab tswj (yuav tsawg dua lossis sib npaug li 1 nm), cov yeeb yaj kiab siab ceev, du nto, siab purity, thiab xim xim xim. Cov ntawv thov muaj xws li: precision nyias zaj duab xis rau micro / nano electronic devices, precision optical films (high-reflectivity films for laser lenses), biomedical coatings, and coatings for aerospace precision components. Cov kev txwv muaj xws li: tus nqi khoom siab (5-10 npaug ntawm cov khoom siv zoo tib yam), tus nqi qis qis heev (0.001-0.1 μm / min), tsis tsim nyog rau cov cheeb tsam loj loj, thiab cov txheej txheem siab.
